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| MPS6523 Discrete POWER & Signal Technologies MPS6523 C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 25 45 4.0 500 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max MPS6523 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation MPS6523 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage* Emitter-Base Breakdown Voltage Collector Cutoff Current I C = 0.5 mA, IB = 0 I E = 10 A, IC = 0 VCB = 20 V, IE = 0 VCB = 20 V, IE = 0, TA = 60 C 25 4.0 50 1.0 V V nA A ON CHARACTERISTICS* hFE VCE(sat) DC Current Gain Collector-Emitter Saturation Voltage VCE = 10 V, IC = 100 A VCE = 10 V, IC = 2.0 mA IC = 50 mA, IB = 5.0 mA 150 300 600 0.5 V SMALL SIGNAL CHARACTERISTICS Cob NF Output Capacitance Noise Figure VCB = 10 V, f = 100 kHz VCE = 5.0 V, IC = 10 A, RS = 10 k, BW =10 Hz to 15.7 kHz 4.0 3.0 pF dB *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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